IRFR1N60ATRR
MOSFET N-CH 600V 1.4A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFR1N60ATRR is a 600V N-Channel Power MOSFET designed for demanding applications. This component features a continuous drain current (Id) of 1.4A (Tc) and a maximum power dissipation of 36W (Tc). It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. Key parameters include a Vgs(th) of 4V (Max) at 250µA, a low gate charge (Qg) of 14 nC (Max) at 10V, and input capacitance (Ciss) of 229 pF (Max) at 25V. The Rds On is specified at 7Ohm maximum for an Id of 840mA at 10V. Operating temperature range is -55°C to 150°C (TJ). This device is suitable for use in power supply units, lighting, and industrial motor control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 840mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 229 pF @ 25 V |