IRFR1N60ATR
MOSFET N-CH 600V 1.4A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR1N60ATR is an N-channel Power MOSFET designed for high-voltage applications. This surface mount device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 1.4A at 25°C. The Rds On is specified at a maximum of 7 Ohms at 840mA and 10V gate drive. With a gate charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 229 pF at 25V, this MOSFET is suitable for power switching in industrial and automotive applications. The DPAK package (TO-252-3) supports a maximum power dissipation of 36W at 25°C (Tc). Operating temperature ranges from -55°C to 150°C. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 840mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 229 pF @ 25 V |
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