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IRFR1N60ATR

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IRFR1N60ATR

MOSFET N-CH 600V 1.4A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR1N60ATR is an N-channel Power MOSFET designed for high-voltage applications. This surface mount device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 1.4A at 25°C. The Rds On is specified at a maximum of 7 Ohms at 840mA and 10V gate drive. With a gate charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 229 pF at 25V, this MOSFET is suitable for power switching in industrial and automotive applications. The DPAK package (TO-252-3) supports a maximum power dissipation of 36W at 25°C (Tc). Operating temperature ranges from -55°C to 150°C. The part is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Rds On (Max) @ Id, Vgs7Ohm @ 840mA, 10V
FET Feature-
Power Dissipation (Max)36W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds229 pF @ 25 V

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