IRFR1N60A
MOSFET N-CH 600V 1.4A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR1N60A: N-Channel Power MOSFET with 600V drain-source voltage and 1.4A continuous drain current at 25°C (Tc). This surface mount device, housed in a TO-252-3 DPAK package, features a maximum power dissipation of 36W (Tc). Key electrical characteristics include a maximum Rds(on) of 7 Ohm at 840mA, 10V, and a gate charge (Qg) of 14 nC at 10V. Input capacitance (Ciss) is specified at 229 pF maximum at 25V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications requiring high voltage switching in power supplies and industrial equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 840mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 229 pF @ 25 V |
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