IRFR120TRR
MOSFET N-CH 100V 7.7A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR120TRR is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 7.7A at 25°C (Tc). The IRFR120TRR exhibits a maximum on-resistance (Rds On) of 270mOhm at 4.6A and 10V gate drive. Key parameters include a gate charge (Qg) of 16 nC maximum at 10V and input capacitance (Ciss) of 360 pF maximum at 25V. With a maximum power dissipation of 42W at 25°C (Tc), it is suitable for surface mount applications in the TO-252-3, DPAK package. This component operates across a wide temperature range of -55°C to 150°C (TJ). Its specifications make it valuable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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