IRFR120TRL
MOSFET N-CH 100V 7.7A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR120TRL is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 7.7 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 270 mOhm at 4.6 A and 10 V gate drive, it offers efficient power switching. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly processes. Its maximum power dissipation is rated at 2.5 W (Ta) and 42 W (Tc). The operating temperature range is -55°C to 150°C (TJ), and it supports a gate-source voltage (Vgs) up to ±20V. Key parameters include input capacitance (Ciss) of 360 pF at 25 V and gate charge (Qg) of 16 nC at 10 V. This MOSFET is commonly utilized in industrial power supplies, automotive systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |