IRFR110TRRPBF
MOSFET N-CH 100V 4.3A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFR110TRRPBF is an N-Channel power MOSFET designed for efficient switching applications. This component features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.3A at 25°C, with a maximum power dissipation of 25W at 25°C case temperature. The Rds On is specified at a maximum of 540mOhm at 2.6A and 10V Vgs. Key parameters include a gate charge (Qg) of 8.3 nC and input capacitance (Ciss) of 180 pF at 25V. The device operates within a temperature range of -55°C to 150°C and is supplied in a TO-252-3 DPAK surface mount package, delivered on tape and reel. This MOSFET is suitable for use in power supplies, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
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