IRFR110TRR
MOSFET N-CH 100V 4.3A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR110TRR is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 100V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 4.3A at 25°C (Tc). With a maximum Rds(on) of 540mOhm at 2.6A and 10V gate drive, it offers low conduction losses. The device is housed in a TO-252-3, DPAK (2 Leads + Tab) surface mount package, suitable for automated assembly processes. Key parameters include a gate charge (Qg) of 8.3 nC maximum at 10V and input capacitance (Ciss) of 180 pF maximum at 25V. It supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 4V maximum at 250µA. Power dissipation is rated at 2.5W (Ta) and 25W (Tc). This MOSFET is utilized in industries such as automotive and industrial power management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |