IRFR110TRL
MOSFET N-CH 100V 4.3A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR110TRL is a N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 4.3A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 540mOhm at 2.6A and 10V Vgs, it offers low conduction losses. The Vishay Siliconix IRFR110TRL utilizes Metal Oxide technology and is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting. Key parameters include a Gate Charge (Qg) of 8.3 nC (max) at 10V and an input capacitance (Ciss) of 180 pF (max) at 25V. It operates across a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 2.5W (Ta) or 25W (Tc). This device is suitable for use in power supplies, motor control, and other demanding electronic systems across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |