IRFR110TR
MOSFET N-CH 100V 4.3A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR110TR is a N-Channel Power MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 4.3A at 25°C (Tc). The Rds(On) is specified at a maximum of 540mOhm at 2.6A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 8.3nC at 10V and Input Capacitance (Ciss) of 180pF at 25V. With power dissipation ratings of 2.5W (Ta) and 25W (Tc), it is suitable for demanding applications. The TO-252-3, DPAK (2 Leads + Tab), SC-63 package is provided in Tape & Reel (TR) for automated assembly. This MOSFET is utilized in various industries, including automotive, industrial control, and power management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
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