IRFR110
MOSFET N-CH 100V 4.3A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR110 is a N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 4.3A at 25°C (Tc). The Rds On is specified at a maximum of 540mOhm at 2.6A and 10V Vgs. Key parameters include Input Capacitance (Ciss) of 180pF (max) at 25V Vds and Gate Charge (Qg) of 8.3nC (max) at 10V Vgs. The device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting, offering a maximum power dissipation of 2.5W (Ta) and 25W (Tc). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial and power management applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
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