IRFR020TRL
MOSFET N-CH 60V 14A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR020TRL is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 14A at 25°C (Tc). With a low on-resistance (Rds On) of 100mOhm at 8.4A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 42W at 25°C (Tc) and 2.5W at 25°C (Ta). Key parameters include a gate charge (Qg) of 25 nC (Max) at 10V Vgs and input capacitance (Ciss) of 640 pF (Max) at 25V Vds. The IRFR020TRL utilizes advanced MOSFET technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package for efficient surface mounting. Its operating temperature range is -55°C to 150°C. This MOSFET is commonly found in industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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