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IRFR020TR

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IRFR020TR

MOSFET N-CH 60V 14A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR020TR is a N-Channel power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 14A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 100mOhm maximum at 8.4A and 10V Vgs. Key parameters include a gate charge (Qg) of 25 nC maximum at 10V Vgs and an input capacitance (Ciss) of 640 pF maximum at 25V Vds. With a maximum power dissipation of 42W at 25°C (Tc) and 2.5W at 25°C (Ta), this MOSFET is suitable for surface mounting in a TO-252-3, DPAK package. Its operating temperature range is -55°C to 150°C. This component finds application in power supplies, motor control, and automotive systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 8.4A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds640 pF @ 25 V

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