IRFR020PBF
MOSFET N-CH 60V 14A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number IRFR020PBF, is a 60V device designed for surface mount applications in a TO-252-3, DPAK package. This component offers a continuous drain current of 14A at 25°C (Tc) and features a low on-resistance of 100mOhm at 8.4A and 10V. With a gate charge of 25 nC at 10V and input capacitance of 640 pF at 25V, the IRFR020PBF is suitable for power management and switching applications. The device supports a maximum gate-source voltage of ±20V and operates within a temperature range of -55°C to 150°C. Power dissipation is rated at 2.5W (Ta) and 42W (Tc). This component finds use in industrial automation, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |