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IRFR014TRL

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IRFR014TRL

MOSFET N-CH 60V 7.7A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR014TRL is an N-Channel MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and supports a continuous drain current of 7.7A at 25°C (Tc). With a low on-resistance (Rds On) of 200mOhm at 4.6A and 10V Vgs, it minimizes conduction losses. The device offers a maximum gate charge (Qg) of 11nC at 10V and input capacitance (Ciss) of 300pF at 25V, facilitating efficient switching. Power dissipation capabilities include 2.5W (Ta) and 25W (Tc). The TO-252-3, DPAK (2 Leads + Tab), SC-63 package is suitable for surface mounting. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in industrial, automotive, and consumer electronics sectors. The device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.7A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 4.6A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 25 V

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