IRFR014TR
MOSFET N-CH 60V 7.7A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFR014TR is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 7.7A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 200mOhm maximum at 4.6A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 11 nC (max) at 10V and input capacitance (Ciss) of 300 pF (max) at 25V, it is suitable for efficient switching. The IRFR014TR is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, enabling high power density. It is rated for a maximum power dissipation of 2.5W (Ta) and 25W (Tc) and operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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