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IRFR010TRL

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IRFR010TRL

MOSFET N-CH 50V 8.2A DPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFR010TRL is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-to-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 8.2A at 25°C (Tc), with a maximum power dissipation of 25W (Tc). The Rds(On) is specified at a maximum of 200mOhm at 4.6A and a gate-source voltage (Vgs) of 10V. With a gate charge (Qg) of 10 nC at 10V and input capacitance (Ciss) of 250 pF at 25V, the IRFR010TRL offers optimized switching performance. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. It operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in industrial and automotive power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.2A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 4.6A, 10V
FET Feature-
Power Dissipation (Max)25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V

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