IRFR010TR
MOSFET N-CH 50V 8.2A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFR010TR is a N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 8.2A at 25°C (Tc), with a maximum power dissipation of 25W (Tc). The Rds On is specified at a maximum of 200mOhm at 4.6A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 10 nC at 10V and Input Capacitance (Ciss) of 250 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package for surface mounting. The Vishay Siliconix IRFR010TR is suitable for use in industrial and automotive sectors. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |