IRFR010
MOSFET N-CH 50V 8.2A DPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFR010. This device features 50V drain-to-source voltage (Vdss) and 8.2A continuous drain current at 25°C (Tc). The IRFR010 offers a maximum on-resistance (Rds On) of 200mOhm at 4.6A and 10V gate-to-source voltage (Vgs). With a power dissipation of 25W (Tc), it is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount configuration. Key parameters include 10 nC gate charge (Qg) at 10V Vgs and 250 pF input capacitance (Ciss) at 25V Vds. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |