IRFPS43N50K
MOSFET N-CH 500V 47A SUPER247Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFPS43N50K. This device features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 47 A at 25°C (Tc). The IRFPS43N50K offers a maximum on-resistance (Rds On) of 90 mOhm at 28 A and 10 V gate-source voltage (Vgs). With a maximum power dissipation of 540 W (Tc), this N-Channel MOSFET is designed for demanding applications. Key parameters include a gate charge (Qg) of 350 nC at 10 V and input capacitance (Ciss) of 8310 pF at 25 V. The device is housed in a SUPER-247™ (TO-274AA) package for through-hole mounting. Typical industrial applications include power supplies, motor control, and lighting.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 350 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8310 pF @ 25 V |
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