IRFPS40N50L
MOSFET N-CH 500V 46A SUPER247Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number IRFPS40N50L. This device features a 500V drain-source breakdown voltage and a continuous drain current of 46A at 25°C (Tc). With a maximum power dissipation of 540W (Tc) and a low on-resistance of 100mOhm at 28A and 10V gate drive, it is suitable for high-power applications. The N-Channel MOSFET is housed in a SUPER-247™ (TO-274AA) through-hole package. Key parameters include a gate charge of 380 nC at 10V and input capacitance of 8110 pF at 25V. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage of ±30V. This component finds application in power supplies and industrial motor control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8110 pF @ 25 V |
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