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IRFPS38N60LPBF

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IRFPS38N60LPBF

MOSFET N-CH 600V 38A SUPER247

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFPS38N60LPBF is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 600V drain-source breakdown voltage (Vds) and a continuous drain current (Id) of 38A at 25°C. With a maximum power dissipation of 540W (Tc) and a low on-resistance (Rds On) of 150mOhm at 23A and 10V gate drive, it ensures efficient power handling. The device utilizes advanced MOSFET technology, offering a maximum gate charge (Qg) of 320 nC at 10V and input capacitance (Ciss) of 7990 pF at 25V. The IRFPS38N60LPBF is housed in a through-hole SUPER-247™ (TO-274AA) package, facilitating robust thermal management. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for power supply, industrial motor control, and high-voltage switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-274AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs150mOhm @ 23A, 10V
FET Feature-
Power Dissipation (Max)540W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageSUPER-247™ (TO-274AA)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7990 pF @ 25 V

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