IRFPS37N50A
MOSFET N-CH 500V 36A SUPER247Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFPS37N50A is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current rating of 36A at 25°C case temperature, with a maximum power dissipation of 446W. It offers a low on-resistance of 130mOhm maximum at 22A and 10V gate-source voltage, facilitated by its Metal Oxide technology. Key parameters include a gate charge of 180 nC at 10V and input capacitance (Ciss) of 5579 pF at 25V. The device is housed in a SUPER-247™ (TO-274AA) through-hole package, suitable for demanding thermal management. Typical industry applications include power supplies, motor control, and industrial automation systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 446W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5579 pF @ 25 V |
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