IRFPS35N50LPBF
MOSFET N-CH 500V 34A SUPER247Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFPS35N50LPBF is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 34A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 145mOhm maximum at 20A and 10V Vgs. With a maximum power dissipation of 450W at 25°C (Tc), the IRFPS35N50LPBF is suitable for power supply circuits and general purpose power switching. Key parameters include a gate charge (Qg) of 230 nC maximum at 10V and input capacitance (Ciss) of 5580 pF maximum at 25V. This component operates within a temperature range of -55°C to 150°C. It is supplied in a SUPER-247™ (TO-274AA) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5580 pF @ 25 V |
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