IRFPS30N60KPBF
MOSFET N-CH 600V 30A SUPER247Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFPS30N60KPBF is a high-performance N-Channel power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 30 A at 25°C. The Rds On is specified at a maximum of 190 mOhm at 18 A and 10 V gate drive. With a maximum power dissipation of 450 W at the case temperature, this MOSFET is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 220 nC at 10 V and input capacitance (Ciss) of 5870 pF at 25 V. The device utilizes advanced MOSFET technology and is housed in a SUPER-247™ (TO-274AA) package, designed for through-hole mounting. Its robust construction and electrical characteristics make it a reliable choice for power supply, motor control, and industrial automation sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-274AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5870 pF @ 25 V |
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