IRFPG50
MOSFET N-CH 1000V 6.1A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFPG50 is an N-Channel Power MOSFET designed for high voltage applications. This through-hole component features a drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 6.1A at 25°C. The Rds On is specified at a maximum of 2 Ohm at 3.6A and 10V gate-source voltage. With a maximum power dissipation of 190W (Tc) and a gate charge of 190 nC at 10V, this MOSFET is suitable for demanding power conversion and switching applications, including industrial power supplies and motor control systems. The component is housed in a TO-247-3 package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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