IRFPG40
MOSFET N-CH 1000V 4.3A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET, N-Channel, 1000 V drain-source voltage, with a continuous drain current of 4.3A at 25°C. This device features a maximum on-resistance of 3.5 Ohms at 2.6A drain current and 10V gate-source voltage. The IRFPG40 offers a low gate charge of 120 nC at 10V and an input capacitance of 1600 pF at 25V. It has a maximum power dissipation of 150W (Tc) and is housed in a TO-247-3 package designed for through-hole mounting. Suitable for high-voltage switching applications in industrial and power supply sectors. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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