IRFPG30
MOSFET N-CH 1000V 3.1A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFPG30 is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 3.1A at 25°C (Tc). With a low on-resistance (Rds On) of 5 Ohm maximum at 1.9A and 10V Vgs, it offers efficient power handling. The device has a maximum power dissipation of 125W (Tc) and a gate charge (Qg) of 80 nC at 10V. Input capacitance (Ciss) is 980 pF maximum at 25V. The IRFPG30 is housed in a TO-247-3 package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in power supplies, industrial motor control, and high-voltage switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 25 V |
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