IRFPF40PBF
MOSFET N-CH 900V 4.7A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFPF40PBF. This high-voltage power MOSFET features a 900V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 4.7A at 25°C. With a maximum on-resistance (Rds On) of 2.5 Ohm at 2.8A and 10V gate-source voltage, it offers efficient switching characteristics. The device supports a gate drive voltage up to 10V for optimal performance and has a maximum gate charge (Qg) of 120 nC at 10V. Its high power dissipation capability of 150W (Tc) and operating temperature range of -55°C to 150°C make it suitable for demanding applications. The component is housed in a TO-247-3 package with through-hole mounting. This MOSFET is utilized in power supply and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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