IRFPF30
MOSFET N-CH 900V 3.6A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFPF30 is a high-voltage N-Channel MOSFET designed for demanding power applications. This device features a Drain-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 3.6A at 25°C (Tc). With a maximum Power Dissipation of 125W (Tc) and an Rds(On) of 3.7 Ohms at 2.2A and 10V, it offers efficient switching performance. Key parameters include a Gate Charge (Qg) of 78 nC at 10V and an Input Capacitance (Ciss) of 1200 pF at 25V. The IRFPF30 is housed in a TO-247-3 package, suitable for through-hole mounting. Its robust construction and electrical characteristics make it suitable for use in power supplies, industrial motor control, and lighting applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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