IRFPE50
MOSFET N-CH 800V 7.8A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFPE50 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 7.8 A at 25°C (Tc). With a maximum power dissipation of 190 W (Tc) and a low On-Resistance (Rds On) of 1.2 Ohm at 4.7 A and 10 V, the IRFPE50 offers efficient switching performance. The TO-247-3 package facilitates through-hole mounting. Key parameters include a Gate Charge (Qg) of 200 nC at 10 V and Input Capacitance (Ciss) of 3100 pF at 25 V. Operating temperature ranges from -55°C to 150°C. This component is utilized in power supply units, industrial motor control, and high-voltage switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 4.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |
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