IRFPE40PBF
MOSFET N-CH 800V 5.4A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number IRFPE40PBF, features an 800V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5.4A at 25°C. This through-hole component, housed in a TO-247AC package, offers a maximum power dissipation of 150W (Tc) and a low on-resistance (Rds On) of 2 Ohm at 3.2A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 130 nC @ 10V and input capacitance (Ciss) of 1900 pF @ 25V. The operating temperature range is -55°C to 150°C. Applications include power supply and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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