IRFPE40
MOSFET N-CH 800V 5.4A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFPE40 is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 800V and a continuous drain current (Id) rating of 5.4A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 2 Ohm at 3.2A and 10V gate-source voltage. With a gate charge (Qg) of 130 nC at 10V, it offers efficient switching characteristics. The MOSFET is housed in a TO-247-3 package, facilitating through-hole mounting. Maximum power dissipation is 150W (Tc). Operating temperature range is from -55°C to 150°C (TJ). This component is commonly utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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