IRFPC50LCPBF
MOSFET N-CH 600V 11A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRFPC50LCPBF, offers a 600V drain-source voltage and 11A continuous drain current at 25°C. This through-hole TO-247-3 packaged device features a maximum power dissipation of 190W (Tc) and a low Rds(on) of 600mOhm at 6.6A and 10V gate drive. Key electrical parameters include a gate charge of 84 nC at 10V and input capacitance (Ciss) of 2300 pF at 25V. The operating temperature range is -55°C to 150°C. This component is utilized in power supply applications and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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