IRFPC50LC
MOSFET N-CH 600V 11A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
This Vishay Siliconix N-Channel Power MOSFET, part number IRFPC50LC, offers a 600V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C (Tc). It features a low on-resistance of 600mOhm maximum at 6.6A and 10V gate-source voltage. The device is housed in a TO-247-3 package, suitable for through-hole mounting. Key parameters include a maximum power dissipation of 190W (Tc), a gate charge of 84nC at 10V, and input capacitance (Ciss) of 2300pF at 25V. Operating temperature ranges from -55°C to 150°C. This component is utilized in power supply applications, motor control, and lighting control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
