IRFPC50APBF
MOSFET N-CH 600V 11A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix IRFPC50APBF is a 600V N-Channel Power MOSFET designed for demanding applications. This component features a continuous drain current capability of 11A at 25°C (Tc) and a maximum power dissipation of 180W (Tc). With a low on-resistance of 580mOhm specified at 6A and 10V gate drive, it ensures efficient power transfer. The MOSFET exhibits a gate charge (Qg) of 70 nC at 10V and an input capacitance (Ciss) of 2100 pF at 25V. Packaged in a TO-247AC through-hole configuration, it is suitable for high-power switching and motor control applications within the industrial and power supply sectors. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage tolerance of ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 580mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
