IRFPC48
MOSFET N-CH 600V 8.9A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFPC48 is a high-performance N-Channel Power MOSFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 8.9A at 25°C. With a maximum power dissipation of 170W (Tc), it is suitable for power supply units, industrial motor control, and lighting systems. The IRFPC48 exhibits a low on-resistance (Rds On) of 820mOhm at 5.3A and 10V, contributing to efficient power transfer. Key parameters include a gate charge (Qg) of 110nC @ 10V and input capacitance (Ciss) of 1800pF @ 25V. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in a TO-247-3 package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 820mOhm @ 5.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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