IRFP9140
MOSFET P-CH 100V 21A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET P-Channel 100V device, part number IRFP9140. This N-channel power MOSFET offers a continuous drain current of 21A at 25°C (Tc) and a maximum power dissipation of 180W (Tc). It features a drain-to-source voltage (Vdss) of 100V and a maximum specified Rds(on) of 200mOhm at 13A and 10V Vgs. The gate charge (Qg) is 61 nC at 10V, with input capacitance (Ciss) at 1400 pF. Designed with a TO-247-3 package for through-hole mounting, this MOSFET operates across a temperature range of -55°C to 175°C (TJ). The IRFP9140 is suitable for applications in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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