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IRFP9140

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IRFP9140

MOSFET P-CH 100V 21A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET P-Channel 100V device, part number IRFP9140. This N-channel power MOSFET offers a continuous drain current of 21A at 25°C (Tc) and a maximum power dissipation of 180W (Tc). It features a drain-to-source voltage (Vdss) of 100V and a maximum specified Rds(on) of 200mOhm at 13A and 10V Vgs. The gate charge (Qg) is 61 nC at 10V, with input capacitance (Ciss) at 1400 pF. Designed with a TO-247-3 package for through-hole mounting, this MOSFET operates across a temperature range of -55°C to 175°C (TJ). The IRFP9140 is suitable for applications in industrial power supplies, motor control, and automotive systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)180W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V

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