IRFP460HPBF
POWER MOSFET TO-247AC, 270 M @ 1Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFP460HPBF is an N-Channel Power MOSFET with a drain-source breakdown voltage of 500V. This through-hole component, packaged in a TO-247AC, offers a continuous drain current of 20A (Tc) and a maximum power dissipation of 329W (Tc). The Rds(On) is specified at 270mOhm maximum at 12A and 10V gate-source voltage. Key parameters include a gate charge of 116 nC @ 10V and input capacitance of 3208 pF @ 100V. The device operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power supplies, industrial motor control, and lighting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 329W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3208 pF @ 100 V |
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