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IRFP460

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IRFP460

MOSFET N-CH 500V 20A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel IRFP460. This power MOSFET features a drain-source breakdown voltage (Vdss) of 500V and a continuous drain current (Id) of 20A at 25°C. The device offers a maximum on-resistance (Rds On) of 270mOhm at 12A and 10V gate-source voltage. With a high power dissipation of 280W (Tc) and a gate charge (Qg) of 210 nC at 10V, the IRFP460 is suitable for demanding power conversion applications. It utilizes advanced MOSFET technology and is presented in a TO-247AC through-hole package. The operating temperature range is -55°C to 150°C. This component finds application in power supplies, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs270mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)280W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 25 V

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