IRFP460
MOSFET N-CH 500V 20A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFP460. This power MOSFET features a drain-source breakdown voltage (Vdss) of 500V and a continuous drain current (Id) of 20A at 25°C. The device offers a maximum on-resistance (Rds On) of 270mOhm at 12A and 10V gate-source voltage. With a high power dissipation of 280W (Tc) and a gate charge (Qg) of 210 nC at 10V, the IRFP460 is suitable for demanding power conversion applications. It utilizes advanced MOSFET technology and is presented in a TO-247AC through-hole package. The operating temperature range is -55°C to 150°C. This component finds application in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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