IRFP450
MOSFET N-CH 500V 14A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFP450. This TO-247-3 packaged power MOSFET features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 14A at 25°C. With a maximum power dissipation of 190W (Tc) and a low on-resistance (Rds On) of 400mOhm at 8.4A and 10V gate-source drive, the IRFP450 is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 150 nC at 10V and input capacitance (Ciss) of 2600 pF at 25V. Operating across a temperature range of -55°C to 150°C, this component is utilized in industrial and power supply applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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