IRFP448
MOSFET N-CH 500V 11A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRFP448 is an N-Channel power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 11 A at 25°C. With a maximum power dissipation of 180 W (Tc), it is suitable for demanding power conversion and switching tasks. The Rds(On) is specified at a maximum of 600 mOhm at 6.6 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 84 nC at 10 V and an input capacitance (Ciss) of 1900 pF at 25 V. The device is housed in a TO-247-3 package, facilitating through-hole mounting. This MOSFET is commonly utilized in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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