IRFP360LCPBF
MOSFET N-CH 400V 23A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFP360LCPBF. This high-performance power MOSFET features a 400V drain-source voltage and a continuous drain current of 23A at 25°C. With a maximum power dissipation of 280W (Tc) and a low on-resistance of 200mOhm at 14A and 10V gate-source drive, it offers efficient power switching. Key parameters include a gate charge of 110nC at 10V and an input capacitance of 3400pF at 25V. The device is packaged in a TO-247-3 (TO-247AC) through-hole mount. This component is suitable for applications in power supplies, motor control, and industrial automation where robust and efficient switching is required. It supports a gate-source voltage range of ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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