IRFP360
MOSFET N-CH 400V 23A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRFP360, offers a 400V drain-source breakdown voltage (Vdss) and a continuous drain current of 23A at 25°C (Tc). This device features a low on-resistance (Rds On) of 200mOhm maximum at 14A and 10V Vgs. With a maximum power dissipation of 280W (Tc) and a gate charge (Qg) of 210 nC at 10V, the IRFP360 is suitable for demanding applications. Key parameters include an input capacitance (Ciss) of 4500 pF maximum at 25V and a gate-source threshold voltage (Vgs(th)) of 4V at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-247-3 package for through-hole mounting. This component finds use in power supply applications, motor control, and industrial power conversion.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |