IRFP354PBF
MOSFET N-CH 450V 14A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFP354PBF. This device features a Drain-to-Source Voltage (Vdss) of 450V and a continuous drain current (Id) of 14A at 25°C. With a high power dissipation rating of 190W (Tc) and a low Rds On of 350mOhm @ 8.4A, 10V, it is suitable for demanding applications. The IRFP354PBF utilizes advanced MOSFET technology, offering a gate charge (Qg) of 160 nC @ 10V and input capacitance (Ciss) of 2700 pF @ 25V. Packaged in a TO-247-3 through-hole configuration, it operates within an extended temperature range of -55°C to 150°C. This component is commonly employed in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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