IRFP350LCPBF
MOSFET N-CH 400V 16A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel IRFP350LCPBF. This component features a 400 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C. The Rds On is specified at a maximum of 300mOhm at 9.6A and 10V gate-source voltage. With a maximum power dissipation of 190W (Tc), this device utilizes MOSFET technology and is packaged in a TO-247-3 (TO-247AC) through-hole configuration. Key parameters include a gate charge (Qg) of 76 nC at 10V and an input capacitance (Ciss) of 2200 pF at 25V. Operating temperature range is -55°C to 150°C (TJ). This component is commonly found in power supply, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 9.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
