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IRFP350

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IRFP350

MOSFET N-CH 400V 16A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRFP350, an N-Channel Power MOSFET, offers a 400V drain-to-source voltage (Vdss) and 16A continuous drain current (Id) at 25°C. This through-hole component, housed in a TO-247-3 package, features a maximum power dissipation of 190W (Tc). Key electrical parameters include a maximum on-resistance (Rds On) of 300mOhm at 9.6A and 10V gate-source voltage, with a gate charge (Qg) of 150 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 2600 pF at 25V. The device supports a gate-source voltage range of ±20V and has a typical threshold voltage (Vgs(th)) of 4V at 250µA. Operating temperature range is from -55°C to 150°C. The IRFP350 is commonly utilized in power supply units, motor control, and industrial automation applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Rds On (Max) @ Id, Vgs300mOhm @ 9.6A, 10V
FET Feature-
Power Dissipation (Max)190W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 25 V

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