IRFP344PBF
MOSFET N-CH 450V 9.5A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFP344PBF. This power MOSFET features a 450V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9.5A at 25°C, with a maximum power dissipation of 150W. The IRFP344PBF offers a low on-resistance (Rds On) of 630mOhm at 5.7A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 80 nC at 10V and input capacitance (Ciss) of 1400 pF at 25V. The device operates within a temperature range of -55°C to 150°C and is housed in a TO-247-3 package for through-hole mounting. This component is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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