IRFP32N50KPBF
MOSFET N-CH 500V 32A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRFP32N50KPBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 32 A at 25°C, with a maximum power dissipation of 460 W (Tc). The Rds(on) is specified as 160 mOhm at 32 A and 10 V gate drive. Key characteristics include a gate charge (Qg) of 190 nC at 10 V and input capacitance (Ciss) of 5280 pF at 25 V. The device utilizes a TO-247-3 package for through-hole mounting and operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply, inverter, and motor control applications across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5280 pF @ 25 V |
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