IRFP32N50K
MOSFET N-CH 500V 32A TO247-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRFP32N50K. This device features a 500V drain-source breakdown voltage and a continuous drain current of 32A at 25°C (Tc). The ON-resistance (Rds On) is a maximum of 160mOhm at 32A and 10V gate-source voltage. With a maximum power dissipation of 460W (Tc), this TO-247-3 packaged component is suitable for high-power switching applications. Key parameters include a gate charge of 190 nC (max) at 10V and an input capacitance (Ciss) of 5280 pF (max) at 25V. The operating temperature range is -55°C to 150°C. This through-hole mounted MOSFET is utilized in power supply, industrial motor control, and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5280 pF @ 25 V |
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