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IRFP32N50K

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IRFP32N50K

MOSFET N-CH 500V 32A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel IRFP32N50K. This device features a 500V drain-source breakdown voltage and a continuous drain current of 32A at 25°C (Tc). The ON-resistance (Rds On) is a maximum of 160mOhm at 32A and 10V gate-source voltage. With a maximum power dissipation of 460W (Tc), this TO-247-3 packaged component is suitable for high-power switching applications. Key parameters include a gate charge of 190 nC (max) at 10V and an input capacitance (Ciss) of 5280 pF (max) at 25V. The operating temperature range is -55°C to 150°C. This through-hole mounted MOSFET is utilized in power supply, industrial motor control, and automotive sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Rds On (Max) @ Id, Vgs160mOhm @ 32A, 10V
FET Feature-
Power Dissipation (Max)460W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5280 pF @ 25 V

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