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IRFP31N50LPBF

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IRFP31N50LPBF

MOSFET N-CH 500V 31A TO247-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix N-Channel Power MOSFET, part number IRFP31N50LPBF, offers a 500V drain-source breakdown voltage and a continuous drain current of 31A at 25°C. This device features a low on-resistance of 180mOhm maximum at 19A and 10V gate drive. The IRFP31N50LPBF boasts a high power dissipation capability of 460W, ideal for demanding applications. With a gate charge of 210 nC and input capacitance of 5000 pF, it is suitable for power conversion and motor control systems across industrial and automotive sectors. The component is housed in a TO-247-3 package with through-hole mounting. Operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 19A, 10V
FET Feature-
Power Dissipation (Max)460W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247AC
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5000 pF @ 25 V

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